Method of removing inversion layers from semiconductor bodies of p-type conductivity

ABSTRACT

A METHOD OF REMOVING INVERSION LAYERS FROM THE SURFACE OF HIGH RESISTANCE SEMICONDUCTOR REGIONS OF PTYPE CONDUCTIVITY WHICH BORDER, IN A SEMICONDUCTOR BODY, ON A SEMICONDUCTOR REGION OF N-TYPE CONDUCTIVIGY AND ARE COVERED WITH AN OXIDE MASKING LAYER. THE METHOD ESSENTIALLY COMPRISES IRRADIATING THE SEMICONDUCTOR BODY WITH NEUTRONS.

 

